Effect of sputtered SiN passivation on current collapse of AlGaN/GaN HEMTs
نویسندگان
چکیده
The effects of sputtered SiN on current collapse of AlGaN/GaN HEMTs have been studied. The current collapse in terms of dynamic on-state resistance was reduced with increasing SiN deposition and post annealing temperatures due to the reduction of SiN/AlGaN interface trap density. These results indicate that sputtered SiN with deposition temperature at 250 °C is a promising candidate for passivation of AlGaN/GaN
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